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Zhuhai Cersol Technology Co, Ltd
Professionally supply advanced ceramic products and related solutions: BN, AlN, Si3N4, SiC, BeO, Al2O3 and ZrO2 etc.
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Aluminum Nitride Substrates AlN Plates For LED Package & Ultra-Power Laser Semiconductor LD

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Aluminum Nitride Substrates AlN Plates For LED Package & Ultra-Power Laser Semiconductor LD

Brand Name : Cersol

Place of Origin : China

MOQ : 100pcs

Packaging Details : BAGS, BARRELS, CARTONS

Payment Terms : T/T IN ADVANCE

Applications : For LED Package & Ultra-Power Laser Semiconductor LD

Size : Customized

Product name : Aluminum Nitride Substrates

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Specification

Specification of Aluminum Nitride Substrates
Description Aluminum nitride ceramic substrate has excellent thermal conductivity, lower dielectric constant and medium loss, reliable insulation performance, excellent mechanical properties, non-toxic, high temperature resistance, chemical corrosion. It is widely used in different areas such as communication devices, high brightness LEDs, and electronic electronic devices. It is an electronic ceramic material with excellent performance.
Advantages (1) It has a high thermal conductivity(＞200w), which is 5-10 times than that of alumina ceramics.
(2) The thermal expansion coefficient (4.3x10-6/℃) matches semiconductor silicon material (3.5-4.0x10-6/℃).
(3) Good mechanical properties, bending strength higher than BEO ceramics, close to alumina.
(4) Excellent electrical performance, high insulation resistance and low medium loss.
(5) The circuit material is compatible with good compatibility, and multi-layer wiring can be performed to achieve the high density and miniaturization of the packaging.
(6) Non-toxic, which is conducive to environmental protection.
Materials Properties C-ALN-200
Color Grey and White
Density g/cm3 ≥3.0
Surface Roughness Ra μm 0.300-0.600
Flexural Strength MPa ＞320
Camber Length‰ ≤2
Thermal Conductivity 25℃, W/(m·k) ≥200
Coefficient of Thermal Expansion 10-6/K(40-400℃) 4.0-5.0
10-6/K(40-800℃) 3.5x10-6
Dielectric Constant kv/MN 17
Volume Resistance 25℃,Ω·cm ≥1014
Remarks: Above values are typical and not for specification.
Size Thickness Length*Width
0.381mm 50.8*50.8mm
110*110mm
114.3*114.3mm
120*120mm
127*127mm
139*190mm
0.500mm
0.635mm
1.0mm
1.5mm
Applications LED package Aluminum Nitride Substrates AlN Plates For LED Package & Ultra-Power Laser Semiconductor LD
Power resistance ceramic base board Aluminum Nitride Substrates AlN Plates For LED Package & Ultra-Power Laser Semiconductor LD
Ultra-power laser semiconductor LD Aluminum Nitride Substrates AlN Plates For LED Package & Ultra-Power Laser Semiconductor LD

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Aluminum Nitride Substrates AlN Plates For LED Package & Ultra-Power Laser Semiconductor LDAluminum Nitride Substrates AlN Plates For LED Package & Ultra-Power Laser Semiconductor LDAluminum Nitride Substrates AlN Plates For LED Package & Ultra-Power Laser Semiconductor LDAluminum Nitride Substrates AlN Plates For LED Package & Ultra-Power Laser Semiconductor LDAluminum Nitride Substrates AlN Plates For LED Package & Ultra-Power Laser Semiconductor LDAluminum Nitride Substrates AlN Plates For LED Package & Ultra-Power Laser Semiconductor LD


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